AI-DRIVEN DESIGN / FULL-CHIP INTEGRATION

AiSIC mixed-signal test chip

A 65-nm mixed-signal test chip for laser fault-injection research, bringing together analog instrumentation, sensing structures and a RISC-V digital subsystem. Its development combines AI-assisted design and integration with human engineering direction.

Watch the full-chip demo From specification to tape-out
Technology65 nm CMOS · 1 × 1 mm die · 21 blocks · 32 pads
EvidenceDesign & simulation
ReviewVerification scope ↗
Annotated AiSIC physical layout showing the analog instrumentation, laser test structures, digital island, SRAM and pad ring
AiSIC physical layout, rendered from the layout database. Foundry cells are represented as plain boxes. Select the figure to view the annotations at full resolution.

From individual circuits to an integrated chip.

AiSIC brings the circuit portfolio together around a practical research task: applying laser fault injection and observing its effects on the same die. Analog sensors and conversion circuits sit alongside dedicated test structures, a digital processing subsystem and the interfaces needed to control and read the experiment.

AiSIC design at a glance
Technology65 nm CMOS
Die outline1 × 1 mm (1 mm²)
Integration21 blocks: 20 hard blocks and the digital island
External connections32 pads
Digital subsystemIbex RV32IMC RISC-V CPU, Ascon-AEAD128, Keccak-f[1600], controllers and 8 kB SRAM
Current stagePost-layout design; fabrication and silicon measurements remain ahead

The layout rendering shows transistors in blue, resistors in green, capacitors in orange, supply wiring and taps in light grey, and signal wiring in grey. Foundry SRAM, I/O and standard cells appear as plain boxes.

AI execution. Human engineering direction.

The project reports that locally trained AI agents designed the analog blocks and test structures, then carried out chip assembly, placement, routing and checks under human direction. Engineers guided the work, reviewed the results and made design decisions.

One month

Reported elapsed development from the initial idea to the current integrated layout.

~3 business days

Reported total human involvement across the project.

~1 hour per block

Reported approximate human involvement at block level.

These are approximate, project-reported figures from the October 2026 development notes. Human involvement and elapsed development are different measures: hands-on time excludes autonomous execution. The figures are not an independently audited speed-up comparison or a delivery guarantee for another design.

The integrated chip also reuses established digital cores and foundry components, detailed below. The development timeline does not mean every component was created from scratch.

Design, sense, convert and capture.

The analog band combines the SAiR10 SAR ADC, current reference, bias generator and temperature sensor. An analog bus routes internal signals to the ADC and to the external monitor path.

Annotated layout of the AiSIC analog band and supply decoupling, with ADC, references, sensors, converters and capture circuits
The analog band and supply decoupling, rendered from the layout database. Select the layout to inspect the labels.

The analog front end converts laser-sensing junction photocurrent to a voltage for the sampled capture array. The frequency-to-voltage and period-to-voltage converters provide complementary readouts of the measurement ring oscillators. A monitor driver exposes selected analog signals at a pad.

Each linked circuit study describes its own simulation conditions and verification limits. Integrating those blocks does not replace the remaining full-chip checks or future silicon measurements.

Built to observe fault injection.

Two register columns, each containing eight flops, sit in separate N-wells watched by built-in current sensors (BBICS). The arrangement lets two sensor designs be compared under laser stimulation. A detected well-current event sets a flag for readout.

AiSIC BBICS layout with two eight-flop register columns and four individually isolated logic-cell test zones
BBICS sensors and register columns above the four-cell test structure. These are physical design views; laser measurements have not yet been performed on fabricated silicon.

The chip also includes a 16-site logic-chain DUT array, four individual logic-cell test zones, a cell-delay time-to-digital converter and a passive Seebeck test structure for thermal laser stimulation. Together they support experiments on several mechanisms within one integrated platform.

A digital subsystem around the experiment.

The digital island combines an Ibex RV32IMC RISC-V CPU, Ascon-AEAD128 and Keccak-f[1600] with SPI host access, test-structure controllers and an ADC recorder. An 8 kB SRAM provides local storage.

Reused components in AiSIC
ComponentOrigin and role
Ibex RISC-V CPUUnmodified open-source lowRISC core; RV32IMC processing
Ascon-AEAD128Unmodified open-source Ascon core; cryptographic workload
Keccak-f[1600]Unmodified OpenTitan permutation core; cryptographic workload
8 kB SRAMCompiled foundry memory
I/O and standard cellsFoundry library components

The AI-assisted contribution covers custom circuit development and chip integration around these existing components. The source notes report the digital island as placed and routed, with static timing met at six corners; silicon operation remains to be validated.

Verification status and remaining work.

The October 2026 project notes report full-chip layout-versus-schematic (LVS) as correct and a verification summary of 19 passed checks, 0 failed checks and 5 provider-dependent checks still open. The remaining work includes foundry cell views and provider reviews. Design-rule exceptions associated with those library views remain unresolved in the reported full-chip state.

Some constituent blocks have accepted verification exceptions, described in their individual studies. The full-chip summary is reported project status, not a fresh verification run performed for this website. It does not establish completed sign-off, a submitted tape-out or measured silicon performance.

Current stage: post-layout, not yet fabricated. Close the provider-dependent checks before fabrication, then validate operation and perform the planned laser experiments on silicon.

A 16-nm FinFET port is a planned next step. It is not presented here as an implemented or verified version of AiSIC.

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